Anti-charging layer for beam lithography and mask fabrication
A Standard patent application filed on 08 February 2002 credited to Dobisz, Elizabeth ; Dressick, Walter J. ; Brandow, Susan L. ; Chen, Mu-San

Details

Application number :

2002321990  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Anti-charging layer for beam lithography and mask fabrication  

Inventor :

Dobisz, Elizabeth ; Dressick, Walter J. ; Brandow, Susan L. ; Chen, Mu-San  

Agent name :

 

Address for service :

 

Filing date :

08 February 2002  

Associated companies :

 

Applicant name :

THE UNITED STATES OF AMERICA, as represented by THE SECRETARY OF THE NAVY NAVAL RESEARCH LABORATORY  

Applicant address :

4555 Overlook Avenue, S.W., Code 1008.2, Washington, DC 20375-5325  

Old name :

 

Original Source :

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