Deposition method of insulating layers having low dielectric constant of semiconductor device
A Standard patent application filed on 16 July 2002 credited to Hwang, Byung-Keun ; Cerny A., Glenn ; Hong, Wan-Shick ; Yang, Sung-Hoon ; Chung, Kyuha

Details

Application number :

2002319930  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Deposition method of insulating layers having low dielectric constant of semiconductor device  

Inventor :

Hwang, Byung-Keun ; Cerny A., Glenn ; Hong, Wan-Shick ; Yang, Sung-Hoon ; Chung, Kyuha  

Agent name :

 

Address for service :

 

Filing date :

16 July 2002  

Associated companies :

 

Applicant name :

SAMSUNG ELECTRONICS CO., LTD.  

Applicant address :

416, Maetan-dong Yeongtong-gu Suwon-si Gyeonggi-do 442-742 Republic of Korea  

Old name :

 

Original Source :

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