Method for cutting sapphire substrate for semiconductor device
A Standard patent application filed on 12 July 2002 credited to Hashimura, Masaki ; Sato, Takao ; Onishi, Masaru

Details

Application number :

2002318840  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Method for cutting sapphire substrate for semiconductor device  

Inventor :

Hashimura, Masaki ; Sato, Takao ; Onishi, Masaru  

Agent name :

 

Address for service :

 

Filing date :

12 July 2002  

Associated companies :

 

Applicant name :

TOYODA GOSEI CO., LTD.  

Applicant address :

1, Aza Nagahata, Oaza Ochiai, Haruhi-cho, Nishikasugai-gun, Aichi 452-8564  

Old name :

 

Original Source :

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