Eeprom cell using p-well for tunneling across a channel
A Standard patent application filed on 15 December 1999 credited to Li, Xiao-Yu ; Mehta, Sunil D.

Details

Application number :

23652  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Eeprom cell using p-well for tunneling across a channel  

Inventor :

Li, Xiao-Yu ; Mehta, Sunil D.  

Agent name :

 

Address for service :

 

Filing date :

15 December 1999  

Associated companies :

 

Applicant name :

Lattice Semiconductor Corporation  

Applicant address :

 

Old name :

 

Original Source :

Go  

Related Patents

• Two transistor eeprom cell using p-well for tunneling across a channel

Same Inventor

• Two transistor eeprom cell using p-well for tunneling across a channel
• Avalanche injection eeprom memory cell with p-type control gate
• Boron doped silicon capacitor plate