Nitride semiconductor device and manufacturing method thereof
A Standard patent application filed on 08 February 2000 credited to Nakamura, Shuji ; Nagahama, Shinichi

Details

Application number :

23272  

Application type :

Standard  

Application status :

SEALED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Nitride semiconductor device and manufacturing method thereof  

Inventor :

Nakamura, Shuji ; Nagahama, Shinichi  

Agent name :

PIZZEYS  

Address for service :

PO Box 291 WODEN ACT 2606  

Filing date :

08 February 2000  

Associated companies :

 

Applicant name :

Nichia Corporation  

Applicant address :

491-100 Oka Kaminakacho Anan-shi Tokushima 774-8601 Japan  

Old name :

 

Original Source :

Go  

Same Inventor

• Nitride semiconductor device