Low metal porous silica dielectric for integral circuit applications
A Standard patent application filed on 10 April 2002 credited to Deng, Eric
;
Lu, Victor Y.
;
Xie, Songyuan
;
Leung, Roger Y.
Details
Application number :
2002309807
Application type :
Standard
Application status :
LAPSED
Under opposition :
No
Proceeding type :
Invention title :
Low metal porous silica dielectric for integral circuit applications
Inventor :
Deng, Eric
;
Lu, Victor Y.
;
Xie, Songyuan
;
Leung, Roger Y.
Agent name :
Address for service :
Filing date :
10 April 2002
Associated companies :
Applicant name :
HONEYWELL INTERNATIONAL, INC.
Applicant address :
Patent Department, 101 Columbia Road, Morristown, NJ 07962-2245