Power mosfet having enhanced breakdown voltage
A Standard patent application filed on 05 June 2002 credited to Samudra, Ganesh Shankar ; Liang, Yung Chii ; Yang, Xin ; Gan, Kian Paau

Details

Application number :

2002309458  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Power mosfet having enhanced breakdown voltage  

Inventor :

Samudra, Ganesh Shankar ; Liang, Yung Chii ; Yang, Xin ; Gan, Kian Paau  

Agent name :

 

Address for service :

 

Filing date :

05 June 2002  

Associated companies :

 

Applicant name :

NATIONAL UNIVERSITY OF SINGAPORE  

Applicant address :

10 Kent Ridge Crescent, Singapore 119260  

Old name :

 

Original Source :

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