Eeprom cell with tunneling at separate edge and channel regions
A Standard patent application filed on 16 December 1999 credited to Fong, Steven J. ; Li, Xiao-Yu

Details

Application number :

21916  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Eeprom cell with tunneling at separate edge and channel regions  

Inventor :

Fong, Steven J. ; Li, Xiao-Yu  

Agent name :

 

Address for service :

 

Filing date :

16 December 1999  

Associated companies :

 

Applicant name :

Lattice Semiconductor Corporation  

Applicant address :

 

Old name :

 

Original Source :

Go  

Same Inventor

• Eeprom cell with tunneling across entire separated channels
• Two transistor eeprom cell
• Two transistor eeprom cell
• Avalanche injection eeprom memory cell with p-type control gate