Soi mosfet with hyperabrupt source and drain junctions
A Standard patent application filed on 31 January 2002 credited to Maszara, Witold P. ; Krishnan, Srinath

Details

Application number :

2002251857  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Soi mosfet with hyperabrupt source and drain junctions  

Inventor :

Maszara, Witold P. ; Krishnan, Srinath  

Agent name :

 

Address for service :

 

Filing date :

31 January 2002  

Associated companies :

 

Applicant name :

ADVANCED MICRO DEVICES, INC.  

Applicant address :

One AMD Place, Mail Stop 68, P.O. Box 3453, Sunnyvale, CA 94088-3453  

Old name :

 

Original Source :

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