Steady state method for measuring the thickness and the capacitance of ultra thin dielectric in the presence of substantial leakage current
A Standard patent application filed on 25 January 2002 credited to Savtchouk, Alexander ; Lagowski, Jacek ; Wilson, Marshall D. ; Jastrezebski, Lubomir L. ; D'Amico, John

Details

Application number :

2002243685  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Steady state method for measuring the thickness and the capacitance of ultra thin dielectric in the presence of substantial leakage current  

Inventor :

Savtchouk, Alexander ; Lagowski, Jacek ; Wilson, Marshall D. ; Jastrezebski, Lubomir L. ; D'Amico, John  

Agent name :

 

Address for service :

 

Filing date :

25 January 2002  

Associated companies :

 

Applicant name :

SEMICONDUCTOR DIAGNOSTICS, INC.  

Applicant address :

3650 Spectrum Boulevard, Suite 130, Tampa, FL 33612-9401  

Old name :

 

Original Source :

Go