Metal gate double diffusion mosfet with improved switching speed and reduced gate tunnel leakage
A Standard patent application filed on 10 December 1999 credited to Mo, Brian S. ; Chau, Duc Q.

Details

Application number :

20509  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Metal gate double diffusion mosfet with improved switching speed and reduced gate tunnel leakage  

Inventor :

Mo, Brian S. ; Chau, Duc Q.  

Agent name :

 

Address for service :

 

Filing date :

10 December 1999  

Associated companies :

 

Applicant name :

Fairchild Semiconductor Corporation  

Applicant address :

 

Old name :

 

Original Source :

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