Self-aligned shield structure for realizing high frequency power mosfet devices with improved reliability
A Standard patent application filed on 29 November 1999 credited to Ng, Szehim Daniel ; Hebert, Francois

Details

Application number :
19264  
Application type :
Standard  
Application status :
LAPSED  
Under opposition :
No  
Proceeding type :
 
Invention title :
Self-aligned shield structure for realizing high frequency power mosfet devices with improved reliability  
Inventor :
Ng, Szehim Daniel ; Hebert, Francois  
Agent name :
 
Address for service :
 
Filing date :
29 November 1999  
Associated companies :
 
Applicant name :
Spectrian  
Applicant address :
 
Old name :
 
Original Source :
Go  

Same Inventor