Source reagent compositions and method for forming metal films on a substrate bychemical vapor deposition
A Standard patent application filed on 23 August 2001 credited to Vaartstra, Brian A. ; Gordon, Douglas ; Kirlin, Peter S. ; Glassman, Timothy E. ; Pombrik, Sofia ; Baum, Thomas H. ; Gardiner, Robin A.

Details

Application number :

2001285235  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Source reagent compositions and method for forming metal films on a substrate bychemical vapor deposition  

Inventor :

Vaartstra, Brian A. ; Gordon, Douglas ; Kirlin, Peter S. ; Glassman, Timothy E. ; Pombrik, Sofia ; Baum, Thomas H. ; Gardiner, Robin A.  

Agent name :

 

Address for service :

 

Filing date :

23 August 2001  

Associated companies :

 

Applicant name :

Advanced Technology Materials, Inc.  

Applicant address :

 

Old name :

 

Original Source :

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