Details

Application number :
2001268730  
Application type :
Standard  
Application status :
LAPSED  
Under opposition :
No  
Proceeding type :
 
Invention title :
Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminum, indium, gallium) nitride ((al,in,ga)n) substratesfor opto-electronic and electronic devices  
Inventor :
Landini, Barbara E. ; Keogh, David M. ; Xu, Xueping ; Flynn, Jeffrey S. ; Vaudo, Robert P. ; Brandes, George R  
Agent name :
 
Address for service :
 
Filing date :
27 June 2001  
Associated companies :
 
Applicant name :
Advanced Technology Materials, Inc.  
Applicant address :
 
Old name :
 
Original Source :
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