Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminum, indium, gallium) nitride ((al,in,ga)n) substratesfor opto-electronic and electronic devices
A Standard patent application filed on 27 June 2001 credited to Landini, Barbara E. ; Keogh, David M. ; Xu, Xueping ; Flynn, Jeffrey S. ; Vaudo, Robert P. ; Brandes, George R

Details

Application number :

2001268730  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminum, indium, gallium) nitride ((al,in,ga)n) substratesfor opto-electronic and electronic devices  

Inventor :

Landini, Barbara E. ; Keogh, David M. ; Xu, Xueping ; Flynn, Jeffrey S. ; Vaudo, Robert P. ; Brandes, George R  

Agent name :

 

Address for service :

 

Filing date :

27 June 2001  

Associated companies :

 

Applicant name :

Advanced Technology Materials, Inc.  

Applicant address :

 

Old name :

 

Original Source :

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