Submicron semiconductor device having a self-aligned channel stop region and a method for fabricating the semiconductor device using a trim and etch
A Standard patent application filed on 27 April 2001 credited to Wang, John Jianshi ; Templeton, Michael K. ; Higashitani, Masaaki

Details

Application number :

2001261086  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Submicron semiconductor device having a self-aligned channel stop region and a method for fabricating the semiconductor device using a trim and etch  

Inventor :

Wang, John Jianshi ; Templeton, Michael K. ; Higashitani, Masaaki  

Agent name :

 

Address for service :

 

Filing date :

27 April 2001  

Associated companies :

 

Applicant name :

Advanced Micro Devices Inc.  

Applicant address :

 

Old name :

 

Original Source :

Go